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  HL6501MG visible high power laser diode for dvd-ram ade-208-515f (z) preliminary 7th edition february 1998 description the HL6501MG is a 0.65 m m band algalnp laser diode(ld) with a multi-quantum well (mqw) structure. it is suitable as a light source for large capacity optical disc memories, such as dvd-ram, and various other types of optical equipment. hermetic sealing of the small package ( f 5.6 mm) assures high reliability. application optical disc memories optical equipment features high output power : 35 mw (cw) visible light output : l p = 658 nm typ small package : f 5.6 mm low astigmatism : 6 m m typ (p o = 5 mw) internal circuit ld pd 1 3 2
HL6501MG 2 absolute maximum ratings (t c = 25c) item symbol value unit optical output power p o 35 mw pulse optical output power p o (pulse) 50 * mw laser diode reverse voltage v r(ld) 2v photo diode reverse voltage v r(pd) 30 v operating temperature topr C10 to +60 c storage temperature tstg C40 to +85 c note: pulse condition : pulse width = 100 ns, duty = 50% optical and electrical characteristics (t c = 25c) items symbols min typ max units test conditions optical output power p o 35 mw kink free * pulse optical output power p o (pulse) 50 mw kink free * threshold current ith 30 45 70 ma operating voltage v op 2.1 2.6 3.0 v p o = 30 mw slope efficiency h s 0.5 0.75 1.0 mw/ma 18(mw)/(i (24mw) C i (6mw) ) lasing wavelength l p 645 658 665 nm p o = 30 mw beam divergence parallel to the junction q // 7 8.5 10.5 deg. p o = 30 mw beam divergence parpendicular to the junction q^ 18 22 26 deg. p o = 30 mw monitor current i s 0.05 0.3 1.5 ma p o = 30 mw, v r(pd) = 5 v asitgmatism a s 6 m mp o = 5 mw, na = 0.55 note: kink free is confirmed at the temperature of 25c.
HL6501MG 3 curve characteristics 0 200 160 120 80 40 50 40 30 optical output power, p o (mw) 20 10 0 foward current i f (ma) optical output power vs.forward current slope efficiency, h s (mw/ma) case temperature t c ( c) slope efficiency vs. case temperature 60 1.0 0.8 0.6 0.4 0.2 0 010 50 40 30 20 t c = 60 c t c = 25 c t c = 0 c threshold current, ith (ma) case temperature, t c ( c) threshold current vs. case temperature 60 010 50 40 30 20 100 10 70 80 80 70 0.5 0.4 0.3 monitor current, i s (ma) 0.2 0.1 optical output power, p o (mw) monitor current vs. optical output power 050 40 30 20 10 0 v r (pd) = 5v t c = 25 c
HL6501MG 4 lasing wavelength . l p (nm) case temperature, t c ( c) lasing wavelength vs. case temperature 650 660 655 relative intensity lasing wavelength, l p (nm) lasing spectrum 1000 800 600 polarization ratio 400 200 optical output power, p o (mw) polarization ratio vs. optical output power 050 40 30 20 10 0 t c = 25 c na = 0.55 t c = 25 c 060 10 50 40 30 20 675 670 665 660 655 650 p o = 30mw p o = 30mw p o = 20mw p o = 10mw p o = 5mw 80 70 monitor current, i s (ma) case temperature, t c ( c) monitor current vs. case temperature 060 1.0 0.8 0.6 0.4 0.2 0 p o = 30mw v r (pd) = 5v 10 50 40 30 20 1200
HL6501MG 5 gain (db) frequency (hz) frequency response 1m 100m 3g 10m po=3mw 3db/div 1g intensity angle, q (deg) far feild pattern - 40 - 100 102030 - 20 - 30 40 1.0 0.8 0.6 0.4 0.2 0 p o = 30mw t c = 25 c perpendicular parallel astigmatism, a s ( m m) optical output power, p o (mw) astigmtism vs. optical output power 050 40 30 20 10 10 6 4 2 0 t c = 25 c na = 0.55 8 0 1 100 80 60 40 20 0 ld forward n = 5pcs d iop 10% judgment 2 3 electrostatic destruction(mil standard) survival rate (%) applied voltage (kv)
HL6501MG 6 characteristics distribution n (pcs) operating voltage, vop (v) 2 3.0 2.8 2.6 2.4 2.2 500 400 100 0 min max typ n po=30mw 18mw i(24mw) - i(6mw) : 2.32 : 2.38 : 2.34 : 500pcs n (pcs) slope efficiency h s (mw/ma) 0.5 1.0 0.9 0.8 0.7 0.6 500 300 200 100 0 min max typ n : 0.765 : 0.902 : 0.834 : 500pcs n (pcs) threshold current, ith (ma) 30 80 70 60 50 40 500 300 200 100 0 min max typ n : 44.6 : 54.7 : 48.5 : 500pcs 400 n (pcs) operating current, iop (ma) 70 120 110 100 90 80 500 300 200 100 0 min max typ n : 80.8 : 90.9 : 84.5 : 500pcs 400 po=30mw 400 200 300
HL6501MG 7 n (pcs) perpendicular, q^ (deg) 16 26 24 22 20 18 500 300 100 0 min max typ n po=30mw : 19.0 : 23.0 : 20.7 : 500pcs n (pcs) parallel , q // (deg) 611 10 9 8 7 500 200 100 0 min max typ n po=30mw po=30mw : 7.5 : 8.8 : 8.0 : 500pcs n (pcs) lasing wavelength l p (nm) 645 665 655 500 300 200 100 0 min max typ n : 656.2 : 659.3 : 657.7 : 500pcs 400 300 400 200 400 n (pcs) monitor current, is (ma) 0 1.0 0.8 0.6 0.4 0.2 500 300 100 0 min max typ n po=30mw v r (pd)=5v : 0.128 : 0.651 : 0.176 : 500pcs 400 200
HL6501MG 8 package dimensions hitachi code jedec eiaj weight (reference value) ld/mg ? ? 0.3 g 1 2 3 5.6 +0 - 0.025 f 1.0 0.1 (0.4) (90 ) 1.6 0.2 f 0.4 +0.1 - 0 f f 4.1 0.3 3.55 0.1 0.25 glass 1.27 f 3 - 0.45 0.1 6.5 1.0 1.2 0.1 2.3 0.2 f 1 2 3 2.0 0.2 emitting point unit: mm
HL6501MG 9 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd. semiconductor & ic div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 for further information write to: hitachi semiconductor (america) inc. 2000 sierra point parkway brisbane, ca. 94005-1897 u s a tel: 800-285-1601 fax:303-297-0447 hitachi europe gmbh continental europe dornacher stra? 3 d-85622 feldkirchen m?nchen tel: 089-9 91 80-0 fax: 089-9 29 30-00 hitachi europe ltd. electronic components div. northern europe headquarters whitebrook park lower cookham road maidenhead berkshire sl6 8ya united kingdom tel: 01628-585000 fax: 01628-585160 hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 049318 tel: 535-2100 fax: 535-1533 hitachi asia (hong kong) ltd. unit 706, north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel: 27359218 fax: 27306071 copyright ?hitachi, ltd., 1997. all rights reserved. printed in japan.


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